Capacitor constructions comprising perovskite-type dielectric materials, and methods of forming capacitor constructions comprising perovskite-type dielectric materials

ABSTRACT

The invention includes a capacitor construction. A capacitor electrode has a perovskite-type dielectric material thereover. The perovskite-type dielectric material has an edge region proximate the electrode, and a portion further from the electrode than the edge region. The portion has a different amount of crystallinity than the edge region. The invention also includes a method of forming a capacitor construction. A capacitor electrode is provided, and a perovskite-type dielectric material is chemical vapor deposited over the first capacitor electrode. The depositing includes flowing at least one metal organic precursor into a reaction chamber and forming a component of the perovskite-type dielectric material from the precursor. The precursor is exposed to different oxidizing conditions during formation of the perovskite-type dielectric material so that a first region of the dielectric material has more amorphous character than a second region of the dielectric material.

TECHNICAL FIELD

[0001] This invention relates to chemical vapor deposition methods offorming perovskite-type dielectric materials (such as barium strontiumtitanate) within capacitor constructions, and to capacitor constructionscomprising perovskite-type dielectric materials.

BACKGROUND OF THE INVENTION

[0002] As DRAMs increase in memory cell density, there is a continuingchallenge to maintain sufficiently high storage capacitance despitedecreasing cell area. Additionally, there is a continuing goal tofurther decrease cell area. One principal way of increasing cellcapacitance is through cell structure techniques. Such techniquesinclude three-dimensional cell capacitors, such as trenched or stackedcapacitors. Yet as feature size continues to become smaller and smaller,development of improved materials for cell dielectrics as well as thecell structure are important. The feature size of 256 Mb DRAMs andbeyond will be on the order of 0.25 micron or less, and conventionaldielectrics such as SiO₂ and Si₃N₄ might not be suitable because ofsmall dielectric constants.

[0003] Highly integrated memory devices are expected to require a verythin dielectric films for the 3-dimensional capacitors of cylindricallystacked or trench structures. To meet this requirement, the capacitordielectric film thickness will be below 2.5 nm of SiO₂ equivalentthickness.

[0004] Insulating inorganic metal oxide materials (such as ferroelectricmaterials, perovskite-type materials and pentoxides) are commonlyreferred to as “high k” materials due to their high dielectricconstants, which make them attractive as dielectric materials incapacitors, for example for high density DRAMs and non-volatilememories. Using such materials enables the creation of much smaller andsimpler capacitor structures for a given stored charge requirement,enabling the packing density dictated by future circuit design. One suchknown material is barium strontium titanate. For purposes ofinterpreting this disclosure and the claims that follow, a“perovskite-type material” is defined to be any material substantiallyhaving a perovskite-type crystal structure, including perovskite itself(CaTiO₃), and other materials. The crystal structure is referred to as“substantially” a perovskite-type crystal structure to indicate thatthere can be slight distortions of the structure corresponding to atheoretically ideal perovskite crystal structure in many of thematerials having perovskite crystal structures, including, for example,perovskite itself.

[0005] It would be desired to develop improved methods of incorporatinghigh k materials into capacitor constructions, and it would particularlybe desirable to develop improved methods for incorporatingperovskite-type materials into capacitor constructions.

SUMMARY OF THE INVENTION

[0006] In one aspect, the invention includes a capacitor construction. Afirst capacitor electrode has a perovskite-type dielectric materialthereover. The perovskite-type dielectric material has a first edgeregion proximate the first electrode. The perovskite-type dielectricmaterial also has a portion further from the first electrode than thefirst edge region. The portion further from the first electrode than thefirst edge region has a different amount of crystallinity than the firstedge region. A second capacitor electrode is over the perovskite-typedielectric material.

[0007] In another aspect, the invention includes a method of forming acapacitor construction. A first capacitor electrode is provided, and aperovskite-type dielectric material is chemical vapor deposited over thefirst capacitor electrode. The chemical vapor depositing includesflowing at least one metal organic precursor into a reaction chamber andforming a component of the perovskite-type dielectric material from theprecursor. The precursor is exposed to different oxidizing conditionsduring formation of the perovskite-type dielectric material so that afirst region of the dielectric material has more amorphous characterthan a second region of the perovskite-type dielectric material that isformed subsequent to the first region. A second capacitor electrode isformed over the perovskite-type dielectric material.

BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

[0009]FIG. 1 is schematic diagram of an exemplary system usable inaccordance with an aspect of the invention.

[0010]FIG. 2 a diagrammatic cross-sectional view of a semiconductorwafer fragment in process in accordance with an aspect of the invention.

[0011]FIG. 3 is a view of the FIG. 2 wafer fragment shown at aprocessing step subsequent to that of FIG. 2.

[0012]FIG. 4 is a view of the FIG. 2 wafer fragment shown at aprocessing step subsequent to that of FIG. 3.

[0013]FIG. 5 is a view of the FIG. 2 wafer fragment shown at aprocessing step subsequent to that of FIG. 4.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] The prior art recognizes the desirability in certain instances offabricating barium strontium titanate dielectric regions of capacitorsto have variable concentration at different elevational locations in thethickness of such regions of barium and strontium. The typical prior artmethod of providing variable stoichiometry of barium and strontium atselected locations within the thickness of a barium strontium titanatedielectric region is to vary the flows of the barium and strontiumprecursors to the reactor during a chemical vapor deposition (which mayor may not be plasma enhanced). For example, increasing or decreasingthe flow of the barium precursor or the strontium precursor will impactthe atomic ratio of barium to strontium in the deposited bariumstrontium titanate layer. In some instances, separate barium andstrontium precursors are mixed in the vapor phase, and the vapor mixtureis flowed to the reactor.

[0015]FIG. 1 diagrammatically illustrates but one chemical vapordeposition system 10 in accordance with but one implementation of achemical vapor deposition method in accordance with an aspect of theinvention. Such comprises an A precursor feed stream 12 and a Bprecursor feed stream 14. Such combine and feed to a vaporizer 16. Aninert gas stream 18 can also be provided to vaporizer 16 to facilitateflow of the vaporized precursors to a downstream chamber.

[0016] A chemical vapor deposition chamber 20 is connected downstream ofvaporizer 16. Such includes a showerhead 22 for receiving anddistributing gaseous precursors therein. A suitable wafer holder 24 isreceived within chamber 20. Oxidizer gas feed streams, for example twooxidizer feed streams C and D, are preferably provided upstream of theshowerhead. Further, an additional inert gas feed stream 19 is shownpositioned between the oxidizer feed streams and chamber. More or lessfeed streams with or without mixing might also of course be utilized.The deposition is preferably conducted at subatmospheric pressure, witha vacuum pump 26 and an exemplary valve 28 being diagrammaticallyillustrated for achieving a desired vacuum pressure within chamber 20.Further, the deposition may or may not be plasma enhanced.

[0017] In one example, and by way of example only, the A stream consistsessentially of a mixture of Ba and Sr precursors (i.e., preferably about50%-50% by volume), and the B stream consists essentially of Ti. Examplepreferred deposition is by metal organic chemical vapor deposition(MOCVD) processes, with at least one oxidizer being provided withinchamber 20 with suitable MOCVD precursors to deposit a desired bariumstrontium titanate comprising dielectric layer. Example precursors, andby way of example only, include: Ba(thd)₂ bis(tetramethylheptanedionate)Sr(thd)₂ bis(tetramethylheptanedionate) Ti(thd)₂(O-i-Pr)₂(isopropoxide)bis(tetramethylheptanedionate) Ba(thd)₂bis(tetramethylheptanedionate) Sr(thd)₂ bis(tetramethylheptanedionate)Ti(dmae)₄ bis(dimethylaminoethoxide) Ba(methd)₂ bis(methoxyethoxyte,hetramethylheptanedionate) Sr(methd)₂ bis(methoxyethoxyte,tetramethylheptanedionate) Ti(mpd)(thd)₂ bis(methylpentanediol,tetramethylheptanedionate) Ba(dpm)₂ bis(dipivaloylmethanato) Sr(dpm)₂bis(dipivaloylmethanato) TiO(dpm)₂ (titanyl)bis(dipivaloylmethanato)Ba(dpm)₂ bis(dipivaloylmethanato) Sr(dpm)₂ bis(dipivaloylmethanato)Ti(t-BuO)₂(dpm)₂ (t-butoxy)bis(dipivaloylmethanato) Ba(dpm)₂bis(dipivaloylmethanato) Sr(dpm)₂ bis(dipivaloylmethanato)Ti(OCH₃)₂(dpm)₂ (methoxy)bis(dipivaloylmethanato)

[0018] Adducts (i.e., tetraglyme, trietherdiamine,pentamethyldiethlyenetriamine), solvents (i.e., butylacetate, methanol,tetrahydrofuran), and/or other materials might be utilized with theprecursors. By way of example only, and where the precursors includemetal organic precursors, example flow rates for the various of suchprecursors include anywhere from 10 mg/min. to 1000 mg/min. of liquidfeed to any suitable vaporizer.

[0019] An exemplary method of the invention is described in connectionwith a chemical vapor deposition method of forming a barium strontiumtitanate comprising dielectric mass having a varied concentration ofcrystallinity within the layer. Such method is described with referenceto FIGS. 2-5. FIG. 2 depicts an exemplary semiconductor construction 110comprising a bulk monocrystalline silicon substrate 112. In the contextof this document, the term “semiconductor substrate” or “semiconductivesubstrate” is defined to mean any construction comprising semiconductivematerial, including, but not limited to, bulk semiconductive materialssuch as a semiconductive wafer (either alone or in assemblies comprisingother materials thereon), and semiconductive material layers (eitheralone or in assemblies comprising other materials). The term “substrate”refers to any supporting structure, including, but not limited to, thesemiconductive substrates described above.

[0020] An insulative layer 114, such as borophosphosilicate glass (BPSG)by way of example only, is formed over substrate 112. An opening extendsthrough the insulative layer 114 and to an electrical node 116 supportedby substrate 112. In the shown embodiment, electrical node 116 is adiffusion region formed within substrate 112. Such diffusion region cancomprise n-type or p-type conductivity-enhancing dopant. A conductiveinterconnect 118 extends through the opening in insulative layer 114 andelectrically connects with diffusion region 116. A conductive capacitorelectrode layer 120, such as platinum or an alloy thereof by way ofexample only, is formed over layer 114. Layer 120 can be referred to asa first capacitor electrode.

[0021] A perovskite-type dielectric material 122 is chemical vapordeposited over first capacitor electrode 120. Perovskite-type material122 can comprise, for example, one or more of barium strontium titanate,barium titanate, lead zirconium titanate, and lanthanum doped leadzirconium titanate. In particular embodiments, perovskite-type material122 can comprise titanium and oxygen, together with one or more ofbarium, strontium, lead and zirconium. In further embodiments,perovskite-type material 122 can comprise, consist essentially of, orconsist of barium, strontium, titanium and oxygen. Layer 122 has a firstdegree of crystallinity, and in particular embodiments is substantiallyamorphous (i.e., the first degree of crystallinity is less than 10%, ascan be determined by, for example, x-ray crystallography).

[0022] Referring to FIG. 3, a second perovskite-type dielectric material124 is chemical vapor deposited over first material 122. Second material124 can comprise any of the various perovskite-type materials discussedabove with reference to layer 122, but comprises a different degree ofcrystallinity than does layer 122. In particular embodiments, layer 124comprises a higher degree of crystallinity than does layer 122. Inpreferred embodiments, layer 124 is substantially crystalline (i.e., isgreater than 90% crystalline, as can be determined by x-raydiffraction), and layer 122 is substantially amorphous.

[0023] Referring to FIG. 4, a third layer of perovskite-type material126 is provided over second layer 124. Third layer 126 can comprise anyof the perovskite-type materials described previously with reference tolayer 122, and can comprise a different degree of crystallinity thandoes layer 124. In particular embodiments, layer 124 is substantiallycrystalline, and layer 126 is substantially amorphous.

[0024] Referring to FIG. 5, a second capacitor electrode 128 is formedover third perovskite-type dielectric layer 126. Second capacitorelectrode 128 can comprise, for example, platinum. Capacitor electrodes120 and 128, together with a dielectric mass defined by layers 122, 124and 126 form a capacitor construction.

[0025] In a preferred embodiment of the present invention, dielectriclayers 122 and 126 are substantially amorphous materials comprising,consisting essentially of, or consisting of barium strontium titanate,and layer 124 is a substantially crystalline material comprising,consisting essentially of, or consisting of barium strontium titanate.An advantage of utilizing the crystalline material 124 is that such canhave better permitivity and dielectric properties relative to amorphousdielectric materials. However, a difficulty with crystallineperovskite-type materials can be that there will be leakage between thecrystalline materials and a metallic electrode (such as, for example, aplatinum electrode) if the crystalline dielectric material is in contactwith the metallic electrode. Such problem can be referred to asinterface-limited leakage. In contrast, amorphous materials haverelatively less leakage when formed against a metallic electrode than docrystalline materials. The present invention can advantageously provideamorphous layers (122 and 126) in contact with metallic electrodes 120and 128, while providing a substantially crystalline layer 124 betweenthe substantially amorphous layers. Accordingly, by utilizing a stack ofsubstantially amorphous and substantially crystalline materials, thepresent invention can obtain advantages associated with both thecrystalline and amorphous materials in a dielectric mass. In aparticular embodiment, amorphous material layers 122 and 126 will eachhave a thickness of from about 10 Å to about 50 Å, and the substantiallycrystalline layer 124 will have a thickness of from about 50 Å to about500 Å In particular embodiments, layers 122 and 126 can be entirelyamorphous, and layer 124 can be entirely crystalline.

[0026] In an exemplary embodiment, layers 122 and 126 can be considerededge regions of a dielectric mass, with layer 122 being considered afirst edge region, and layer 126 considered a second edge region. Layer124 can then be considered as a portion which is displaced further fromfirst electrode 120 than is edge region 122, and which has a differentdegree of crystallinity than does edge region 122. Alternatively, layer124 can be considered as a portion displaced further from secondcapacitor electrode 128 than is second edge region 126, and which has adifferent degree of crystallinity than second edge region 126.

[0027] Layers 122, 124 and 126 can be formed in a common chemicaldeposition method, with the term “common” indicating that the chemicalvapor deposition of layers 122, 124 and 126 occurs in the same reactionchamber. Further, the chemical vapor deposition of layers 122, 124 and126 can be uninterrupted, with the term “uninterrupted” indicating thata treated wafer remains in a reaction chamber from the initial formationof layer 122 until the finish of layer 126. Layers 122, 124 and 126 cancomprise a same chemical composition as one another, and vary only incrystallinity; or alternatively can comprise different chemicalcompositions than one another, and further vary in crystallinity.

[0028] A method of forming layers 122, 124 and 126 is to utilize thereaction process described with reference to FIG. 1, with barium,strontium and titanium precursors flowing through streams A and B, andwith oxidants flowing through streams C and D. It is found that a changein oxidant can change the crystallinity of the BST layer formed.Specifically, it is found that if an oxidant is primarily a so-calledstrong oxidant (either O₂ or O₃), a deposited BST material will besubstantially crystalline, or in particular embodiments entirelycrystalline; whereas if a weaker oxidant (such as N₂O) is primarilyutilized, the deposited film will be substantially amorphous, or inparticular cases entirely amorphous. It can be preferred that layers 122and 126 are formed utilizing an oxidant that consists essentially of, orconsists of N₂O, and that layer 124 is formed utilizing an oxidant thatconsists essentially of, or consists of one or both of O₂ and O₃.Preferably, the chemical vapor deposition occurs at a temperature ofless than 500° C., such as, for example, a temperature of from 450° C.to about 500° C. It is found that if a temperature exceeds 500° C., suchcan cause an amorphous perovskite-type material to convert to acrystalline structure.

[0029] It is noted that layers 122, 124 and 126 can be formed withabrupt interfaces separating such layers by an abrupt change from astrong oxidant (for example, O₃) to a weak oxidant (for example, N₂O).Alternatively, layers 122, 124 and 126 can be formed with gradualinterfaces if there is a gradual switch from the strong oxidant to theweak oxidant. For instance, a linear gradient can be utilized inswitching from the weak oxidant to the strong oxidant, and then back tothe weak oxidant.

[0030] Although the shown embodiment comprises a dielectric mass withonly three stacked layers, it is to be understood that more than threestacked layers can be utilized in methodology of the present invention.For instance, a dielectric material can be formed with multiple stackedlayers alternating between amorphous, crystalline and amorphous; or withmultiple stacked layers that comprise several amorphous layers stackedon top of each other, followed by several crystalline layers stacked ontop of each other.

[0031] Although O₃, O₂, and N₂O are discussed as exemplary oxidants, itis to be understood that other oxidants, including, for example, NO,H₂O₂ and H₂O can also be utilized in methodology of the presentinvention.

[0032] The switch from a strong oxidant to a weak oxidant can, inparticular embodiments, change not only the crystallinity associatedwith a perovskite-type layer, but also change a chemical composition.Accordingly, the change from a weak oxidant in forming a substantiallyamorphous layer 122 to a strong oxidant in forming a substantiallycrystalline layer 124 can result in a change of the chemical compositionof barium strontium titanate in applications in which a constant andunchanged flow of barium, strontium and titanium precursors is providedwithin a reaction chamber.

[0033] A preferred total flow of oxidant into a process of the presentinvention can be anywhere from about 100 standard cubic centimeters perminute (sccm) to about 4,000 sccm, more preferably is from about 500sccm to about 2,000 sccm, and yet more preferably is from about 750 sccmto about 1,250 sccm. A preferred pressure range within a chemical vapordeposition reactor in methodology of the present invention is preferablyfrom about 100 mTorr to about 20 Torr, with a range of from about 1 Torrto about 6 Torr being to be more preferred. In an exemplary embodiment,the formation of dielectric materials 12, 124 and 126 occurs within anApplied Materials Centura™ frame processor. In such embodiments,susceptor temperature within the processor is preferably from about 100°C. to about 700° C., more preferably from about 400° C. to about 700°C., with less than or equal to about 550° C. being even more preferred,particularly in obtaining continuity in a deposited layer at a thicknessof at or below 200 Å, and more preferably down to 50 Å. Most preferably,the susceptor temperature is kept at less than or equal to 550° C.during all of the deposit to form a perovskite-type dielectric layer. Aninert gas, such as argon, is also preferably flowed to a reactionchamber downstream of oxidizer feeds, and preferably and substantiallythe same flow rate as a total oxidizer flow rate.

[0034] In one aspect of the invention, crystallinity gradients across abarium strontium titanate film can be adjusted by changing a flow rateand/or type of oxidant flowed into a chemical vapor deposition reactorwith barium, strontium and titanium precursors. Additional and/oralternate preferred processing can occur in accordance with any of ourco-pending U.S. patent application Ser. No. 09/476,516, filed on Jan. 3,2000, entitled “Chemical Vapor Deposition Methods of Forming a High kDielectric Layer and Methods of Forming a Capacitor”, listing CemBasceri as an inventor; and U.S. patent application Ser. No. 09/580,733,filed on May 26, 2000, entitled “Chemical Vapor Deposition Methods andPhysical Vapor Deposition Methods”, listing Cem Basceri as an inventor.Each of these is hereby fully incorporated by reference.

[0035] In compliance with the statute, the invention has been describedin language more or less specific as to structural and methodicalfeatures. It is to be understood, however, that the invention is notlimited to the specific features shown and described, since the meansherein disclosed comprise preferred forms of putting the invention intoeffect. The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

1. A method of forming a capacitor construction, comprising: providing afirst capacitor electrode; forming a perovskite-type dielectric materialover the first capacitor electrode, the perovskite-type dielectricmaterial having a first edge region proximate the first electrode and aportion further from the first electrode than the first edge region,said portion having a different amount of crystallinity than the firstedge region; and forming a second capacitor electrode over theperovskite-type dielectric material.
 2. The method of claim 1 whereinthe first edge region has less crystallinity than said portion.
 3. Themethod of claim 1 wherein the first edge region is substantiallyamorphous and wherein said portion is substantially crystalline.
 4. Themethod of claim 1 wherein the perovskite-type material comprises asecond edge region proximate the second capacitor electrode, wherein theportion is between the first and second edge regions, and wherein thesecond edge region has an amount of crystallinity that is about the sameas the first edge region.
 5. The method of claim 1 wherein theperovskite-type material has a different chemical composition in saidportion than in the edge region.
 6. The method of claim 1 wherein theperovskite-type material has the same chemical composition in saidportion as in the edge region.
 7. The method of claim 1 wherein theperovskite-type material comprises barium, strontium, titanium andoxygen throughout both said portion and the edge region.
 8. The methodof claim 1 wherein the perovskite-type material consists essentially ofbarium, strontium, titanium and oxygen throughout both said portion andthe edge region.
 9. The method of claim 1 wherein the perovskite-typematerial consists of barium, strontium, titanium and oxygen throughoutboth said portion and the edge region.
 10. The method of claim 1 whereinthe perovskite-type material comprises titanium and oxygen.
 11. Themethod of claim 1 wherein the perovskite-type material comprisestitanium and oxygen, together with one or more of barium, strontium,lead and zirconium.
 12. The method of claim 1 wherein theperovskite-type material comprises one or more of barium strontiumtitanate, barium titanate, lead zirconium titanate, and lanthanum dopedlead zirconium titanate.
 13. The method of claim 1 wherein the edgeregion and said portion are together formed by an uninterrupted chemicalvapor deposition process.
 14. The method of claim 1 wherein the firstcapacitor electrode comprises platinum.
 15. The method of claim 1wherein the first and second capacitor electrodes comprise platinum. 16.A method of forming a capacitor construction, comprising: providing afirst capacitor electrode; forming a perovskite-type dielectric materialover the first capacitor electrode; forming a second capacitor electrodeover the perovskite-type dielectric material; and wherein, theperovskite-type dielectric material comprises a first substantiallyamorphous region physically against the first electrode, a secondsubstantially amorphous region physically against the second electrode,and a substantially crystalline region between the first and secondsubstantially amorphous regions.
 17. The method of claim 16 wherein theperovskite-type material has a different chemical composition in thethird region than in the first and second regions.
 18. The method ofclaim 16 wherein the perovskite-type material has the same chemicalcomposition throughout the first, second and third regions.
 19. Themethod of claim 16 wherein the perovskite-type material comprisesbarium, strontium, titanium and oxygen throughout the first, second andthird regions.
 20. The method of claim 16 wherein the perovskite-typematerial consists essentially of barium, strontium, titanium and oxygenthroughout the first, second and third regions.
 21. The method of claim16 wherein the perovskite-type material comprises titanium and oxygen,together with one or more of barium, strontium, lead and zirconium. 22.The method of claim 16 wherein the perovskite-type material comprisesone or more of barium strontium titanate, barium titanate, leadzirconium titanate, and lanthanum doped lead zirconium titanate.
 23. Themethod of claim 16 wherein the first, second and third regions aretogether formed by an uninterrupted chemical vapor deposition process.24. A method of forming a capacitor construction, comprising: providinga first capacitor electrode; chemical vapor depositing a perovskite-typedielectric material over the first capacitor electrode; the chemicalvapor depositing comprising flowing at least one metal organic precursorinto a reaction chamber and forming a component of the perovskite-typedielectric material from the precursor; the precursor being exposed todifferent oxidizing conditions during formation of the perovskite-typedielectric material so that a first region of the dielectric materialhas more amorphous character than a second region of the perovskite-typedielectric material that is formed subsequent to the first region; andforming a second capacitor electrode over the perovskite-type dielectricmaterial.
 25. The method of claim 24 wherein the first and secondcapacitor electrodes comprise metal.
 26. The method of claim 24 whereinthe first and second capacitor electrodes comprise platinum.
 27. Themethod of claim 24 wherein the chemical vapor deposition is conducted toform the dielectric material at a temperature of less than 500° C. 28.The method of claim 24 wherein the chemical vapor deposition isconducted to form the dielectric material at a temperature of from about450° to about 500° C.
 29. The method of claim 24 wherein theperovskite-type dielectric material comprises barium, strontium,titanium and oxygen throughout the first and second regions.
 30. Themethod of claim 24 wherein the perovskite-type dielectric materialconsists essentially of barium, strontium, titanium and oxygenthroughout the first and second regions.
 31. The method of claim 24wherein the perovskite-type dielectric material consists of barium,strontium, titanium and oxygen throughout the first and second regions.32. The method of claim 24 wherein the perovskite-type dielectricmaterial comprises titanium and oxygen, together with one or more ofbarium, strontium, lead and zirconium.
 33. The method of claim 24wherein the perovskite-type dielectric material comprises one or more ofbarium strontium titanate, barium titanate, lead zirconium titanate, andlanthanum doped lead zirconium titanate.
 34. The method of claim 24wherein the chemical vapor depositing is uninterrupted during formationof the first and second regions.
 35. The method of claim 24 wherein theoxidizing conditions include exposure to one or more of N₂O, NO, H₂O₂,H₂O, O₃, and O₂.
 36. The method of claim 24 wherein the oxidizingconditions include exposure to first oxidizing conditions comprising oneor both of O₃ and O₂ to form the first region; and exposure to secondoxidizing conditions comprising N₂O to form the second region.
 37. Themethod of claim 24 wherein the oxidizing conditions include exposure tofirst oxidizing conditions comprising utilization of an oxidantconsisting of one or both of O₃ and O₂ to form the first region; andexposure to second oxidizing conditions comprising utilization of anoxidant consisting of N₂O to form the second region.
 38. The method ofclaim 24 further comprising forming a third region of theperovskite-type dielectric material subsequent to the formation of thesecond region during the chemical vapor depositing; the precursor beingexposed to different oxidizing conditions during formation of the secondand third regions of the perovskite-type dielectric material so that thethird region of the perovskite-type dielectric material has moreamorphous character than the second region of the perovskite-typedielectric material.
 39. The method of claim 38 wherein the chemicalvapor depositing is uninterrupted during formation of the first, secondand third regions.
 40. The method of claim 38 wherein the oxidizingconditions used during formation of the first region are identical tothe oxidizing conditions used during formation of the third region. 41.The method of claim 38 wherein the oxidizing conditions include exposureto first oxidizing conditions comprising utilization of an oxidantconsisting of one or both of O₃ and O₂ to form the first region;exposure to second oxidizing conditions comprising utilization of anoxidant consisting of N₂O to form the second region; and exposure tothird oxidizing conditions comprising utilization of an oxidantconsisting of one or both of O₃ and O₂ to form the third region.
 42. Themethod of claim 38 wherein the first region comprises a thickness offrom about 10 Å to about 50 Å; the second region comprises a thicknessof from about 50 Å to about 500 Å; and the third region comprises athickness of from about 10 Å to about 50 Å.
 43. A capacitorconstruction, comprising: a first capacitor electrode; a perovskite-typedielectric material over the first capacitor electrode, theperovskite-type dielectric material having a first region proximate thefirst electrode and a second region further from the first electrodethan the first region, said second region having a different amount ofcrystallinity than the first region; and a second capacitor electrodeover the perovskite-type dielectric material.
 44. The capacitorconstruction of claim 43 wherein the first region comprises a thicknessof from about 10 Å to about 50 Å; and the second region comprises athickness of from about 50 Å to about 500 Å.
 45. The capacitorconstruction of claim 43 wherein the first region has less crystallinitythan the second region.
 46. The capacitor construction of claim 43wherein the first region is substantially amorphous and the secondregion is substantially crystalline.
 47. The capacitor construction ofclaim 43 wherein the perovskite-type material comprises a third regionproximate the second capacitor electrode, wherein the second region isbetween the first and third regions, and wherein the third region has anamount of crystallinity that is about the same as the first region. 48.The capacitor construction of claim 47 wherein the perovskite-typematerial comprises barium, strontium, titanium and oxygen throughoutboth the first and second regions.
 49. The capacitor construction ofclaim 47 wherein the first region comprises a thickness of from about 10Å to about 50 Å; the second region comprises a thickness of from about50 Å to about 500 Å; and the third region comprises a thickness of fromabout 10 Å to about 50 Å.
 50. The capacitor construction of claim 43wherein the perovskite-type material has a different chemicalcomposition in the second region than in the first region.
 51. Thecapacitor construction of claim 43 wherein the perovskite-type materialhas the same chemical composition in the first and second regions. 52.The capacitor construction of claim 43 wherein the perovskite-typematerial comprises barium, strontium, titanium and oxygen throughoutboth the first and second regions.
 53. The capacitor construction ofclaim 43 wherein the perovskite-type material consists essentially ofbarium, strontium, titanium and oxygen throughout first and secondregions.
 54. The capacitor construction of claim 43 wherein theperovskite-type material consists of barium, strontium, titanium andoxygen throughout the first and second regions.
 55. The capacitorconstruction of claim 43 wherein the perovskite-type material comprisestitanium and oxygen.
 56. The capacitor construction of claim 43 whereinthe perovskite-type material comprises titanium and oxygen, togetherwith one or more of barium, strontium, lead and zirconium.
 57. Thecapacitor construction of claim 43 wherein the perovskite-type materialcomprises one or more of barium strontium titanate, barium titanate,lead zirconium titanate, and lanthanum doped lead zirconium titanate.58. The capacitor construction of claim 43 wherein the first capacitorelectrode comprises a metal.
 59. The capacitor construction of claim 43wherein the first capacitor electrode comprises platinum.
 60. Thecapacitor construction of claim 43 wherein the first and secondcapacitor electrodes comprise platinum.